Electron beam lithography with reduced charging effects

Details Electron beam lithography with reduced charging effects Electron beam lithography with reduced charging effects

H - Electricity

01

J

H01J 37/317 (2006.01) G03F 1/00 (2006.01) G03F 7/20 (2006.01) G03F 7/38 (2006.01) H01L 21/027 (2006.01) H01L 21/469 (2006.01)

Patent

CA 2103411

A direct-writing electron beam is used for defining features in a resist layer and hence ultimately in an underlying workpiece, such as in a phase-shifting mask substrate or a semiconductor integrated circuit wafer. The resist layer is located on a top major surface of the workpiece. In a specific embodiment, the resist layer is located underneath a protective layer of polyvinyl alcohol ("PVA"); and a grounded conductive layer, such as a conductive organic layer, is located on the protective layer. After exposing the top major surface of the resulting structure to the direct-writing electron beam, the following steps are performed: (1) a plasma etching completely removes the entire thickness of the conductive layer as well as a small fraction of the thickness of the PVA layer; (2) the PVA layer is then completely removed by dissolving it in water; (3) another plasma etching removes a small fraction of the thickness of the resist layer, including any unwanted residues; and (4) the resist layer is developed.

Procédé utilisant un faisceau d'électrons à gravure directe pour créer des motifs dans une couche de résist et, ultimement, dans le substrat sous-jacent, par exemple un masque déphaseur ou une plaquette de circuits intégrés. La couche de résist couvre une face importante de l'objet à graver. Dans une variante, la couche de résist est recouverte d'une couche protectrice de polyalcool de vinyle (PVAL), elle-même recouverte d'une couche conductrice mise à la masse, par exemple une couche de matière organique. L'exposition au faisceau d'électrons est complétée par les étapes suivantes : 1) décapage au plasma pour enlever complètement la couche conductrice et une faible épaisseur de la couche de PVAL; 2) rinçage à l'eau pour dissoudre complètement la couche de PVAL; 3) décapage au plasma pour enlever une faible épaisseur de la couche de résist, de même que tous résidus nuisibles; et 4) développement de la couche de résist.

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