H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/76 (2006.01) H01L 29/06 (2006.01) H01L 29/24 (2006.01) H01L 29/16 (2006.01) H01L 29/20 (2006.01) H01L 29/22 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2195987
An n- or p-doped semiconductor region (2) accommodates the depletion zone (21) of an active area (3) of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination (4) for the active area (3) is constituted with a semiconductor doped oppositely to the semiconductor region (2), and is arranged immediately adjacently around the active area (3) on or in a surface (20) of the semiconductor region (2). The lateral extension (W) of the junction termination (4) is greater than the maximum vertical extension (T) of the depletion zone (21), and the semiconductor region (2) as well as the junction termination (4) are constituted with a semiconductor with a band gap of at least 2 eV.
Une zone semi-conductrice (2) dopée par des impuretés de type n ou p accueille la zone de déplétion (21) d'une zone active (3) du composant à semi-conducteur avec une expansion verticale dépendant d'une tension de blocage appliquée. La terminaison marginale (4) de la zone active (3) est formée à l'aide d'un semi-conducteur dopé de manière inverse à celle dont est dopée la zone semi-conductrice (2) et est disposée de manière directement adjacente autour de la zone active (3) sur ou à l'intérieur d'une surface (20) de la zone semi-conductrice (2). L'expansion latérale (W) de la terminaison marginale (4) est supérieure à l'expansion verticale (T) maximale de la zone de déplétion (21), et la zone semi-conductrice (2) ainsi que la terminaison marginale (4) sont formées à l'aide d'un semi-conducteur ayant un intervalle d'énergie entre deux bandes d'au moins 2 eV.
Mitlehner Heinz
Stephani Dietrich
Weinert Ulrich
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
LandOfFree
Semiconductor component with junction termination with high... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor component with junction termination with high..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component with junction termination with high... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1692124