An arc chamber for an ion implantation system

H - Electricity – 01 – J

Patent

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Details

H01J 27/16 (2006.01) H01J 27/04 (2006.01) H01J 27/22 (2006.01) H01J 37/08 (2006.01) H01J 37/317 (2006.01) H01L 21/265 (2006.01)

Patent

CA 2267082

The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.

L'invention se rapporte à la fabrication de matériaux et de structures ayant des propriétés mécaniques, électriques et thermiques sélectionnées. L'invention concerne plus particulièrement l'utilisation de ces matériaux et de ces structures dans des systèmes d'implantation d'ions. Des structures comprenant des matériaux à base de bore servent de composants que l'on utilise dans des implanteurs comprenant des chambres à arc où est généré un faisceau d'ions qui s'implante dans une cible telle qu'une plaquette de semi-conducteur.

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