H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/00 (2006.01)
Patent
CA 2201744
A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also dislcosed.
L'invention concerne un procédé de production de diodes électroluminescentes à partir de carbure de silicium présentant un rendement externe accru, consistant à orienter un faisceau de lumière laser sur une surface d'une partie en carbure de silicium, et dans lequel la lumière laser est suffisante pour vaporiser le carbure de silicium qu'il vient heurter afin de définir ainsi une entaille dans la partie en carbure de silicium, et ensuite à graver à sec la partie en carbure de silicium afin d'éliminer les sous-produits générés lorsque la lumière laser coupe la partie en carbure de silicium. L'invention concerne également la tranche et la structure de diodes résultantes.
Cree Inc.
Cree Research Inc.
Sim & Mcburney
LandOfFree
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