H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/072 (2006.01) H01L 25/075 (2006.01) H01L 29/06 (2006.01) H01L 31/0352 (2006.01) H01L 31/103 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2456679
The present invention presents a semiconductor device (1) which is adapted to a solar cell, and in which a semiconductor element (1) is produced by forming one flat surface (2) on a spherical or substantially spherical silicon single crystal (1a, 1b). A diffusion layer (3) and a substantially spherical pn junction (4) are formed on this semiconductor element (1), and a diffusion-mask thin film (5) and a positive electrode (6a) are formed on the flat surface (2). A negative electrode (6b) is formed at the apex on the opposite side to the positive electrode (6a), and an antireflection film (7) is formed on the surface side of the diffusion layer (3).
L'invention concerne un dispositif à semi-conducteur (10), qui convient à une pile solaire, comprenant un élément semi-conducteur (1) de monocristal de silicium (1a, 1b) sphérique ou généralement sphérique, une face plane (2), une couche de diffusion (3), une jonction p-n (4) généralement sphérique, un film mince (5) pour masque de diffusion, et une électrode positive (6a) installée à la surface de la face plane (2), une électrode négative (6b) placée sur la partie supérieure du côté opposé à l'électrode positive (6a), ainsi qu'un film antireflet (7) disposé sur le côté avant de la couche de diffusion (3).
Adams Thomas
Kyosemi Corporation
Nakata Josuke
LandOfFree
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