Method of ion implantation into a semiconductor substrate...

Details Method of ion implantation into a semiconductor substrate... Method of ion implantation into a semiconductor substrate...

H - Electricity

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L

356/176

H01L 21/425 (2006.01) H01L 21/265 (2006.01) H01L 21/266 (2006.01)

Patent

CA 1131802

A METHOD OF ION IMPLANTATION INTO A SEMICONDUCTOR SUBSTRATE PROVIDED WITH AN INSULATING FILM ABSTRACT OF THE DISCLOSURE In the production of a semiconductor device, such as an IC including MOS transistors, impurity ions are implanted into the semiconductor substrate of the device provided with an insulating film. The insulating film is electrically charged by the impurity ions and may be destroyed due to an electric potential between the insulating film and the semiconductor substrate. A novel process provided by the invention prevents the destruction of the insulating film and shortens the ion implantation time, since the beam current of the impurity ions is successively increased until the required dosing amount is obtained.

338601

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