H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/336 (2006.01) H01L 21/205 (2006.01) H01L 21/22 (2006.01) H01L 21/265 (2006.01) H01L 21/306 (2006.01) H01L 21/335 (2006.01) H01L 29/786 (2006.01)
Patent
CA 2251438
A process for producing thin-film transistors having amorphous silicon as semiconductor material whereby the amorphous silicon is doped by ion implantation through the metal layer for the drain and source contacts.
La présente invention porte sur un processus de fabrication de transistors à couches minces comprenant du silicium amorphe comme matériau semiconducteur, le silicium amorphe étant dopé par implantation d'ions à travers la couche métallique pour les contacts de drain et de source.
Luder Ernst
Maier Gert
Ullmann Jorg
Luder Ernst
Marks & Clerk
Universitat Stuttgart
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