Photovoltaic cell with thick silicon oxide and silicon...

Details Photovoltaic cell with thick silicon oxide and silicon... Photovoltaic cell with thick silicon oxide and silicon...

H - Electricity

01

L

H01L 31/18 (2006.01) H01L 31/02 (2006.01) H01L 31/0216 (2006.01) H01L 31/0224 (2006.01)

Patent

CA 2598228

A method for the production of a photovoltaic device, for instance solar cell, is disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer on the rear surface, wherein the dielectric layer has a thickness larger than 100 nm; depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer and forming back contacts through the dielectric layer and the passivation layer. A method for the production of a photovoltaic device, for instance solar cell, is also disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer stack on the rear surface, wherein the dielectric layer stack comprises a sub-stack of dielectric layers, the sub-stack having a thickness larger than 100 nm, the dielectric layer stack having a thickness larger than 200 nm; and forming back contacts through the dielectric layer stack. Corresponding photovoltaic devices, for instance solar cell devices, are also disclosed.

L'invention concerne un procédé de production d'un dispositif photovoltaïque tel qu'une cellule solaire, qui comporte les étapes consistant à: prévoir un substrat comportant une surface avant principale et une surface arrière; déposer une couche diélectrique sur la surface arrière, l'épaisseur de cette couche étant supérieure à 100 nm; déposer une couche de passivation comprenant du SiN hydrogéné sur la couche diélectrique; et former des contacts arrière à travers la couche diélectrique et la couche de passivation. L'invention concerne aussi un procédé de production d'un dispositif photovoltaïque tel qu'une cellule solaire, qui comporte les étapes consistant à: prévoir un substrat comportant une surface avant principale et une surface arrière; déposer une pile de couches diélectriques sur la surface arrière, ladite pile comprenant un sous-ensemble de piles de couches diélectriques dont l'épaisseur est supérieure à 100 nm, et l'épaisseur de la pile de couches diélectriques étant supérieure à 200 nm; et former des contacts arrière à travers la pile de couches diélectriques. Des dispositifs photovoltaïques correspondants tels que des dispositifs à cellules solaires sont également décrits.

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