Microchip laser

Details Microchip laser Microchip laser

H - Electricity

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H01S 3/05 (2006.01) H01S 3/06 (2006.01) H01S 3/0933 (2006.01) H01S 3/106 (2006.01) H01S 3/109 (2006.01) G02F 1/39 (2006.01) H01S 3/08 (2006.01) H01S 3/108 (2006.01) H01S 3/23 (2006.01)

Patent

CA 2046637

2046637 9009688 PCTABS00001 A gain medium (32) is disposed between two mirrors (34, 36) to form a resonant cavity. The cavity length (l) is selected so that the gain bandwidth of the gain medium is less than or substantially equal to the frequency separation of the cavity modes and such that a cavity mode frequency falls within the gain bandwidth. A nonlinear optical material (50) is disposed either inside or outside the cavity to generate new laser wavelengths. The nonlinear optical material (50) may be contained in a cavity which is resonant at the microchip laser frequency. Alternatively, the microchip laser (30) may be tuned, for example thermally or by the application of a longitudinal or transverse stress, to the frequency of the resonant cavity. The laser is optically pumped by any appropriate source such as a semiconductor injection laser (38) or laser array. Suitable gain media include Nd:YAG, Nd:GSGG and Nd pentaphosphate, and suitable non-linear optical material include MgO:LiNbO3 and KTP.

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