Voltage-gated metal-enhanced fluorescence, chemiluminescence...

G - Physics – 01 – N

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G01N 21/76 (2006.01) G01N 21/64 (2006.01) G01N 27/26 (2006.01)

Patent

CA 2723391

In the present invention, it is demonstrated for the first time, the influence of electrical current on the ability of surface plasmons to amplify fluorescence signatures. An applied direct current across silver island films (SiFs) of low electrical resistance perturbs the fluorescence enhancement of close-proximity fluorophores. For a given applied current, surface plasmons in "just-continuous" low resistance films are sparsely available for fluorophore dipole coupling and hence the enhanced fluorescence is gated as a function of the applied current.

La présente invention démontre pour la première fois linfluence du courant électrique sur laptitude des plasmons de surface à amplifier les signatures de fluorescence. Un courant continu appliqué à travers des films à îlot dargent (SiFs) de faible résistance électrique perturbe lamélioration de la fluorescence des fluorophores à proximité immédiate. Pour un courant appliqué donné, les plasmons de surface dans les films à faible résistance « juste continus » sont disponibles de manière clairsemée pour le couplage à dipôle des fluorophores et la fluorescence améliorée est ainsi déclenchée en fonction du courant appliqué.

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