Semiconductor device

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H - Electricity

01

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356/34

H01L 29/47 (2006.01) H01L 29/06 (2006.01) H01L 29/76 (2006.01) H01L 29/861 (2006.01)

Patent

CA 1078073

ABSTRACT A semiconductor device includes first and second semi- conductor regions of one conductivity type in a semiconductor body, separated by a barrier region having a net activator con- centration of the opposite conductivity type with a current path in the device between the first and second regions across the barrier region, the current flow through the barrier region be- ing by charge carriers of one conductivity type. The first region has a higher doping concentration of the one conductivity type than the second region. The barrier region is sufficiently thin that depletion layers formed at zero bias with both the first and second regions merge together in the barrier region to substantially deplete the whole barrier region of mobile charge carriers of both conductivity types.

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