H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 39/14 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2051778
For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode is formed on the first and second oxide superconducting regions. The superconducting device thus formed can functions as a super-FET.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Bereskin & Parr
Sumitomo Electric Industries Ltd.
LandOfFree
Method for manufacturing superconducting device having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing superconducting device having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing superconducting device having a... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1766282