Method of designing mask pattern for a self-scanning...

Details Method of designing mask pattern for a self-scanning... Method of designing mask pattern for a self-scanning...

H - Electricity

01

L

H01L 27/15 (2006.01) B41J 2/45 (2006.01) H01L 21/3205 (2006.01) H01L 21/768 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2349624

A method for designing a mask pattern of a self-scanning light-emitting device optimal when forming a metallization pattern also serving as a light-shielding layer. A mask pattern forming a first metallization pattern on a transparent insulation film overlaps with a first control electrode. The width L1 of the super posed portion in the direction perpendicular to the array of transfer elements satisfies the following relation: L1>(S+dS)+a where, S is the etched amount of the side face of the first metallization pattern, dS is variation of the etched amount, and a is the misalignment of the mask pattern.

L'invention concerne un procédé de conception du motif de masque d'un dispositif électroluminescent à autobalayage, lequel procédé est optimal lorsqu'on forme un motif de métallisation servant également de couche de protection contre la lumière. A cet effet, on superpose, sur une première électrode de commande, un motif de masque formant un premier motif de couche de métallisation sur un film d'isolement transparent. La largeur L1 de la partie superposée dans la direction perpendiculaire à l'ensemble des éléments de transfert satisfait à la relation suivante: L1>(S+dS)+a, où S désigne la quantité attaquée de la face latérale du premier motif de métallisation, dS désigne la variation de cette quantité attaquée, et a désigne le défaut d'alignement du motif de masque.

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