H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/70 (2006.01) C23C 14/04 (2006.01) H01L 21/283 (2006.01) H01L 21/285 (2006.01) H01L 21/321 (2006.01) H01L 21/768 (2006.01) H01L 23/535 (2006.01)
Patent
CA 2159648
Submicron vias (12-14) are filled by sputter deposition of a conductor such as aluminum (15) onto a substrate (11) such as silicon or silicon oxides. The aluminum film (15) is deposited at a first lower temperature and then the temperature is increased. The differential coefficient of thermal expansion of the substrate (11) relative to the metal (15) conductor forces the conductor to expand into the via (12- 14). Maintaining an effective thickness (1+) and controlling the temperature increase from the first temperature to the second temperature, effectively and reliably fills submicron vias having aspect ratios up to 4. The present invention is particularly useful with filling vias having re-entrant angles up to 20°.
Hendel Rudi
Levinstein Hyman
Macrae & Co.
Tokyo Electron Limited
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