Method of making an organic thin film transistor, and...

H - Electricity – 01 – L

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H01L 51/40 (2006.01) G11C 13/02 (2006.01) H01L 29/72 (2006.01) H01L 29/786 (2006.01) H01L 51/30 (2006.01)

Patent

CA 2160394

Organic thin film transistors having improved properties (e.g., on/off ratio > 105 at 20°C) are disclosed. The improved transistors comprise an organic active layer (16) of low conductivity (<5 x 10-8 S/cm at 20°C, preferably less than 10-8 or even 10-9 S/cm). A method of producing such materials is disclosed. Rapid thermal annealing was found to have beneficial results. An exemplary and preferred material is .alpha.-hexathienylene (.alpha.-6T). The improved transistors are expected to find use for, e.g., active liquid crystal displays and for memories.

Divulgation concernant des transistors à pellicule organique mince, avec propriétés améliorées (p. ex. rapport de résistance > 105 à 20 degrés C). Les transistors améliorés comportent une couche organique active (16) de faible conductivité (< 5 x 10-8 S/cm à 20 degrés C, et préférablement moins de 10-8 ou même 10-9 S/cm). Divulgation d'une méthode pour produire des matériaux de ce type. Un recuit thermique rapide a donné des résultats avantageux. Un exemple de matériau privilégié est l'alpha-hexathiénylène (alpha-6T). Les transistors améliorés pourraient servir p. ex. pour les mémoires et les affichages à cristaux liquides.

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