Method for manufacturing thin-film resistor layers

Details Method for manufacturing thin-film resistor layers Method for manufacturing thin-film resistor layers

C - Chemistry, Metallurgy

23

C

204/96.1

C23C 14/14 (2006.01) C23C 14/00 (2006.01) C23C 14/06 (2006.01) C23C 14/34 (2006.01) C23C 14/35 (2006.01)

Patent

CA 2015008

ABSTRACT OF THE DISCLOSURE In an atmosphere containing nitrogen as a reactive gas, chromium silicide is atomized and dusted onto unheated substrates to form stable and uniform thin-film resistor layers. The resistor stability and the temperature coefficient are further improved by oxygen as a further reactive gas. Chromium silicide layers are preferably dusted on in an atmosphere that is composed of an argon/nitrogen mixture or an argon/nitrogen/oxygen mixture.

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