Field-effect transistor

Details Field-effect transistor Field-effect transistor

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 29/778 (2006.01)

Patent

CA 2070756

A field-effect transistor (FET) in which an InGaAs layer formed on a GaAs substrate is formed in such a manner that the In composition ratio on the gate electrode side on the substrate surface is made small and the In composition ratio on the GaAs substrate side is made large. Thereby, the FET does not cause a decline in the mutual conductance in the FET and a decline in the noise figure ( NF ) even if negative voltage is applied to a gate electrode.

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