H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/812 (2006.01) H01L 29/64 (1990.01)
Patent
CA 2070216
ABSTRACT A microwave semiconductor device with a FET structure having Interdigital Source and Drain Islands (ISDI-FET) has active layers separately defined for each source-gate finger- drain subcell so that each FET cell is divided into islands. The device includes pairs of FET subcells with collinear source and drain electrodes, separated by narrow gate fingers, formed on a GaAs substrate. Each gate finger is connected via a gate lead and a metal strap to a gate electrode contact pad, the metal strap having air bridges which extend over source electrodes on source regions of other pairs. A U-shaped metal strip connects a drain pad to drain electrodes at contact areas on the legs of the U-shaped strip, those legs extending over source electrodes and gate fingers via air bridges. The source electrodes on one side of pairs of FETs are connected to a first source electrode wiring layer via a metal strap that forms air bridges over drain electrodes while source electrodes on the other side of a pair are connected to a second source electrode wiring layer via another metal strap that forms air bridges over drain electrodes. This arrangement offers the low noise advantage of PI-FETs and some of the real estate savings of standard interdigital FETs. It also provides an arrangement in which large numbers of pairs of FETs can be interconnected together to form a power device.
Dindo Salam F.
Kelly H.a.
LandOfFree
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