H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 51/50 (2006.01)
Patent
CA 2412379
A new transparent-charge-injection-layer consisting of LiF/Al/Al-doped-SiO has been developed as (i) a cathode for top emitting organic light-emitting diodes (TOLEDs) and as (ii) a buffer layer against damages induced by energetic ions generated during deposition of other functional thin films by sputtering, or plasma-enhanced chemical vapor deposition. A luminance of 1900 cd/m2 and a current efficiency of 4 cd/A have been achieved in a simple testing device structure of ITO/TPD (60 nm)/Alq3 (40 nm)/LiF (0.5 nm)/Al(3 nm)/Al-doped-SiO (30 nm). A thickness of 30 nm of Al-doped SiO is also found to protect organic layers from ITO sputtering damage.
Feng Xiadong
Han Sijin
Johnson David J.
Lu Zhenghong
Wood Richard P.
Lux Operating Limited Partnership
Luxell Technologies Inc.
Sim & Mcburney
LandOfFree
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