H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/76 (2006.01) H01L 21/762 (2006.01)
Patent
CA 2048339
A process for preparing a semiconductor member comprises the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.
L'invention est une méthode de fabrication d'éléments semi-conducteurs qui comporte les opérations suivantes : formation d'un élément ayant une région semi-conductrice monocristalline non poreuse sur une région semi-conductrice monocristalline poreuse, soudage sur la surface de cette région semi-conductrice monocristalline non poreuse de la surface d'un élément dont la surface est constituée d'une substance isolante, puis enlèvement de la région semi-conductrice monocristalline poreuse par une attaque à l'acide.
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
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