C - Chemistry – Metallurgy – 07 – C
Patent
C - Chemistry, Metallurgy
07
C
400/5152, 260/32
C07C 381/12 (2006.01) C07D 333/24 (2006.01) C07D 333/46 (2006.01) C08G 59/68 (2006.01) G03F 7/027 (2006.01) G03F 7/029 (2006.01)
Patent
CA 2007395
ABSTRACT OF THE DISCLOSURE: Disclosed are novel radiation-sensitive, ethylenically unsaturated, copolymerizable, sulfonium salts of the general formula (I) [(R)a(R1)b(R2)c?] A? (I) where R is a monovalent aromatic organic radical, R1 is monovalent organic aliphatic radical from the group consisting of the alkyl, cycloalkyl and substituted alkyl radicals, R2 is divalent or trivalent aliphatic or aromatic organic radical which forms a heterocylic or fused ring structure, a is an integer from 0 to 3, b is an integer from 0 to 2, c is the integer 0 or 1, the sum a+b+c being 3, A? is an anion of an acid and at least one of the radicals R to R2 contains one of the radicals Image or -O-W-X-Z-CH=CH2 where W is a single bond or one of the carbon groups Image , Image , Image , Image , Image , Image , Image , Image , Image , Image , Image , Image X is a divalent, unsubstituted or substituted radical, Y is H, alkyl of 1 to 6 carbon atoms or phenyl and Z is O or NY. These new compounds that are useful as initiators for the production of semiconductor photoresists, have particularly high photochemical reactivity both in the short-wavelength UV range of 250-350 nm and in the longer wavelength range of 330-430 µm, depending on their substitution pattern.
Basf Aktiengesellschaft
Robic
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