Electron-detector diode biassing scheme for improved writing...

Details Electron-detector diode biassing scheme for improved writing... Electron-detector diode biassing scheme for improved writing...

H - Electricity

01

L

356/192

H01L 21/42 (2006.01) H01J 37/244 (2006.01) H01J 37/317 (2006.01)

Patent

CA 2022251

Disclosed is a biassing scheme for a beam position location apparatus (50) which comprises electron detector diodes (52) in an electron beam lithography machine (10) such that the detector diodes (52) deposit fewer secondary electrons (62) on a substrate (16) being processed by the electron beam (22) and thus reduce or eliminate any charge buildup on said substrate which deflect the electron beam (22) causing pattern distortion.

L'invention est une méthode de polarisation pour un dispositif de positionnement de faisceaux (50) pour machine de lithographique à faisceau électronique (10) qui comprend des diodes de détection d'électrons (52) qui déposent moins d'électrons secondaires (62) sur le substrat (16) traité par le faisceau électronique (22), ce qui réduit ou élimine les charges d'électricité statique sur ce substrat qui produisent des distorsions en faisant dévier le faisceau électronique (22).

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