Method for forming a seed and a semiconductor film using...

Details Method for forming a seed and a semiconductor film using... Method for forming a seed and a semiconductor film using...

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/265 (2006.01) H01L 21/331 (2006.01)

Patent

CA 2071192

A seed is formed in a manner that a crystalline film is formed on an underlayer material, and then partly made amorphous by ion implanting impurities into the crystalline film, with a crystalline portion left behind in part thereof. After forming a step configuration on the underlayer material, the crystalline film is formed, and ions are implanted over its entire surface of the crystalline film.

Un germe est formé d'une manière qu'une pellicule cristalline est formée sur une matière sous-jacente et est ensuite rendue partiellement amorphe par implantation ionique visant à introduire des impuretés dans la pellicule cristalline, une partie restant toutefois à l'état cristallin. Après formation d'une configuration en gradins sur la matière sous-jacente, la pellicule cristalline est formée et des ions sont implantés sur la totalité de sa surface.

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