H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/84 (2006.01) H01L 21/762 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01)
Patent
CA 2559219
A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.
La présente invention a trait à un dispositif et une structure de silicium sur isolant présentant des zones de contrainte locale dans la couche active de silicium formées par l'accroissement de l'épaisseur des zones sous-jacentes d'une couche d'isolation enterrée séparant la couche active de silicium du substrat. La contrainte transférée des zones épaissies sous-jacentes de la couche d'isolation vers les zones sus-jacentes contraintes augmente la mobilité de support dans ces zones confinées de la couche active. Des dispositifs formés dans et sur la couche active de silicium peuvent profiter de la mobilité de support améliorée dans les zones contraintes espacées.
Furukawa Toshiharu
Koburger Charles William III
Slinkman James Albert
International Business Machines Corporation
Wang Peter
LandOfFree
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