Semiconductor laser diode arrangement

Details Semiconductor laser diode arrangement Semiconductor laser diode arrangement

H - Electricity

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H01S 3/101 (2006.01) G02B 5/08 (2006.01) H01S 3/00 (2006.01) H01S 5/18 (2006.01) H01S 5/42 (2006.01) H01S 5/00 (2006.01)

Patent

CA 2036957

A semiconductor device, formed on a wafer (13), comprises an array of laser diodes (Q1,Q2), each emitting a beam (B1,B2) parallel to the wafer surface, and, integrated with the array, individually tilted deflecting mirrors (R1,R2) forming an array of virtual sources (Q1',Q2'). Compared to the physical separation of the laser diodes, the virtual sources are spaced more closely, they can even be coincident, thereby reducing the apparent spacing between the beam origins. The reflected beams (B1',B2') are substantially perpendicular to the wafer providing a "surface-emitting" device. The required deflector configuration (54) can be fabricated in a single unidirectional process, the mirror positions and orientations being determined by proper segment geometry of the etch-mask.

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