H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/532 (2006.01) H01L 21/768 (2006.01) H01L 23/485 (2006.01) H01L 23/535 (2006.01)
Patent
CA 2160234
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC- interconnections with a metal-pitch as small as 1.5 µm, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
L'invention concerne deux systèmes de métallisation de PtSi/TiW/TiW(N)/Au (type I) et PtSi/TiW/TiW(N)/TiW/Au (type II) ainsi qu'un procédé associé, pour des interconnexions de microcircuits. Les systèmes et procédé de métallisation sont capables d'effectuer des interconnexions CI d'un pas métallique allant jusqu'à 1,5 µm, ou même inférieur. Les systèmes de métallisation offrent une fiabilité de fonctionnement continu à haute température et avec un fort courant.
Marks & Clerk
Telefonaktiebolaget Lm Ericsson
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