Silicon carbide power mos field effect transistors and...

Details Silicon carbide power mos field effect transistors and... Silicon carbide power mos field effect transistors and...

H - Electricity

01

L

H01L 29/78 (2006.01) H01L 21/04 (2006.01) H01L 21/336 (2006.01) H01L 29/24 (2006.01) H01L 29/08 (2006.01)

Patent

CA 2502850

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer (12), a first p-type silicon carbide region (20) adjacent the drift layer and having a first n-type silicon carbide region (24) therein, an oxide layer (28) on the drift layer, and an n- type silicon carbide limiting region (26) disposed between the drift layer and a portion of the first p-type region. The limiting region may have a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.

L'invention concerne des transistors MOS en carbure de silicium, qui peuvent comprendre une couche de migration en carbure de silicium de type n, une première zone en carbure de silicium de type p adjacente à cette couche et présentant une première région en carbure de silicium de type n, une couche d'oxyde sur la couche de migration, et une région limite en carbure de silicium de type n entre la couche de migration et une partie de la zone de type p. La région limite peut avoir une concentration de porteurs supérieure à la concentration de porteurs de la couche de migration. L'invention concerne également des procédés de fabrication correspondants.

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