C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 23/08 (2006.01) C30B 29/36 (2006.01)
Patent
CA 2757206
A seed crystal (11) having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal (11) is increased. A coating film including carbon is formed on the backside surface of the seed crystal (11). The coating film and a pedestal (41) are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal (11) to the pedestal (41). A single crystal (52) is grown on the seed crystal (11). Before the growth is performed, a carbon film (22) is formed by carbonizing the coating film.
Dans le procédé de la présente invention, un germe cristallin (11) qui a une surface avant et une surface arrière est préparé. La rugosité de surface de la surface arrière du germe cristallin (11) est accrue. Un film de revêtement contenant du carbone est formé sur la surface arrière du germe cristallin. Le film de revêtement et une surface d'appui (41) sont mis en contact l'un avec l'autre, en prenant en sandwich un adhésif. L'adhésif est durci afin de fixer le germe cristallin (11) à la surface d'appui (41). On fait croître un monocristal (52) sur le germe cristallin (11). Avant d'effectuer la croissance susmentionnée, un film de carbone (22) est formé par carbonisation du film de revêtement susmentionné.
Harada Shin
Nishiguchi Taro
Sasaki Makoto
Marks & Clerk
Sumitomo Electric Industries Ltd.
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