Photodiode and photodiode module

Details Photodiode and photodiode module Photodiode and photodiode module

H - Electricity

01

L

H01L 31/0248 (2006.01) H01L 31/0352 (2006.01) H01L 31/103 (2006.01)

Patent

CA 2275818

Besides the central pn-junction and the central electrode, a PD chip has a peripheral pn-junction and a peripheral electrode which do not appear on the sides. The ends of the peripheral pn-junction are covered with a protection layer for preventing self-shortcircuit. A reverse bias is applied to the peripheral electrode for making a wide depletion layer beneath the peripheral pn-junction. Extra carriers generated by peripherally-incidence rays are fully absorbed by the peripheral depletion layer and annihilated by the reverse bias.

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