Low dimensional thermoelectrics fabricated by semiconductor...

H - Electricity – 01 – L

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H01L 35/30 (2006.01) H01L 35/34 (2006.01)

Patent

CA 2650855

In some embodiments, the present invention is directed to thermoelectric devices comprising nanostructured thermoelectric elements, such nanostructured thermoelements being formed by an etching of doped semiconductor wafers. The present invention is also directed to methods of making and using such thermoelectric devices, as well as to systems which employ such devices. Such devices and their manufacture are unique in that they employ a "top down" approach to the formation of the nanostructured or low-dimensional thermoelectric materials used therein.

Dans certains modes de réalisation, la présente invention concerne des dispositifs thermoélectriques comprenant des éléments thermoélectriques nanostructurés, de tels éléments thermoélectriques nanostructurés étant réalisés par gravure de plaquettes semi-conductrices dopées. La présente invention concerne également des procédés de fabrication et d'utilisation de tels dispositifs thermoélectrique, ainsi que des systèmes utilisant de tels dispositifs. De tels dispositifs et leur fabrication sont uniques en ce qu'ils utilisent une approche 'descendante' pour la réalisation des matériaux thermoélectriques nanostructurés ou de faibles dimensions qui y sont utilisés.

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