Method for forming isolated regions of silicon

Details Method for forming isolated regions of silicon Method for forming isolated regions of silicon

H - Electricity

01

L

356/141, 356/178

H01L 21/76 (2006.01) H01L 21/3065 (2006.01) H01L 21/308 (2006.01) H01L 21/762 (2006.01) H01L 27/00 (2006.01)

Patent

CA 1097826

METHOD FOR FORMING ISOLATED REGIONS OF SILICON Abstract of the Disclosure A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.

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