H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/027 (2006.01) G03F 7/20 (2006.01)
Patent
CA 2132005
2132005 9320482 PCTABS00027 A method of printing a sub-resolution device feature (16) having first and second edges spaced in close proximity to one another on a semiconductor substrate (20) includes the steps of first depositing a radiation-sensitive material on the substrate, then providing a first mask image segment (11) which corresponds to the first edge. The first mask image segment is then exposed with radiation (10) using an imaging tool (12) to produce a first pattern edge gradient (14). The first pattern edge gradient defines the first edge of the feature in the material. A second mask image segment (13) is then provided corresponding to the second feature edge. This second mask image segment is exposed to radiation (10) to produce a second pattern edge gradient (17) which defines the second edge of the feature. Once the radiation-sensitive material has been developed, the two-dimensional feature is reproduced on the substrate.
Chen Jang Fung
Matthews James A.
Deeth Williams Wall Llp
Microunity Systems Engineering Inc.
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