H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/29 (2006.01) H01L 23/31 (2006.01)
Patent
CA 2736983
A semiconductor device of the present invention (1) has a substrate (2); a semiconductor element (3) provided on at least one side of the substrate (2) ; a first resin (4) obtained by curing a first resin composition which fills a gap between the substrate (2) the semiconductor element (3) and the semiconductor element (3); and a second resin (5) which covers the substrate (2) and the first resin (4), and obtained by curing a second resin composition after the first resin composition is cured. In the present invention, adhesion strength between the first resin (4) and the second resin (5) is 18 MPa or larger at room temperature.
Linvention concerne un dispositif à semi-conducteur (1) comprenant un substrat (2), un élément semi-conducteur (3) disposé sur un côté au moins du substrat (2), une première résine (4) obtenue en solidifiant une première composition de résine remplissant lespace entre le substrat (2) et lélément semi-conducteur (3), et une seconde résine (5) obtenue en solidifiant une seconde composition de résine après la solidification de la première composition de résine, et recouvrant le substrat (2) et la première résine (4). La force de liaison entre la première résine (4) et la seconde résine (5) est dau moins 18 MPa à température ambiante
Smart & Biggar
Sumitomo Bakelite Co. Ltd.
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