Positive photoresist

G - Physics – 03 – F

Patent

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Details

G03F 7/038 (2006.01) G03F 7/004 (2006.01) G03F 7/30 (2006.01) G03F 7/039 (2006.01)

Patent

CA 2152236

Positive photoresist compositions which can be developed in aqueous-alkaline media, comprising (a) at least one homopolymer or copolymer containing acid-labile .alpha.-alkoxyalkyl ester groups, (b) at least one carboxyl-containing copolymer in which the content of carboxyl groups is from 0.40 to 5.50 mol/kg, (c) at least one compound which forms an acid on exposure to actinic radiation, and (d) an organic solvent, have high photosensitivity, a long shelf life of the components and of coatings produced therefrom and are particularly suitable as etch resists for the production of printed circuits.

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