H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/201 (2006.01) H01L 29/205 (2006.01) H01L 29/73 (2006.01) H01L 29/737 (2006.01) H01L 29/778 (2006.01)
Patent
CA 2050245
Abstract of the Disclosure This invention is a semiconductor device comprising a heterojunction of (AlAs)x(InSb)1-x wherein a composition ratio x is 0.65 to 0.85 and InP. In addition, this invention is a semiconductor device comprising a heterojunction of (AlAs)x(GaSb)1-x wherein a composition ratio x is 0.4 to 0.6 and InP. Furthermore, this invention is a semiconductor device comprising a heterojunction of GaAsxSb1-x wherein a composition ratio x is 0.4 to 0.6 and InP. Each heterojunction is formed with good crystal lattice matching properties in an interface. Since an interface level concentration in the heterojunction interface is reduced, various conventional problems caused by a high-concentration interface level can be solved. In addition, since characteristics such as a high saturated electron speed and a high thermal conductivity of InP are achieved in a semiconductor device, a high-power element having good RF characteristics can be provided.
Marks & Clerk
Sumitomo Electric Industries Ltd.
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