G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 3/00 (2006.01) C03C 15/00 (2006.01) H01S 5/183 (2006.01) H01S 5/00 (2006.01) H01S 5/02 (2006.01)
Patent
CA 2298492
A micro-lens formed by etching a semiconductor member in a chemical etching solution, which contains an etchant causing diffusion-limited etching to the semiconductor, using an etching mask having an opening defining a portion of the semiconductor member to be a convex surface of the micro-lens, and a combination micro-lens and vertical cavity surface emitting layer (VCSEL) in which a micro- lens is formed at a window region of a laser emitting surface by the diffusion- limited etching.
Jeon Heon-Su
Lee Jeong-Kwan
Shin Hyun-Kuk
Ridout & Maybee Llp
Samsung Electronics Co. Ltd.
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