Integrated circuit with a very small-sized reading diode

Details Integrated circuit with a very small-sized reading diode Integrated circuit with a very small-sized reading diode

H - Electricity

01

L

H01L 29/768 (2006.01)

Patent

CA 2552281

The invention relates to conductive integrated circuits disposed above a semiconductor substrate and a diode formed between two electrodes. In order to obtain a very small-sized diode, the following steps are carried out: creation of the electrodes (ELn, GRST), thermal oxidation of the electrodes then the substrate between the electrodes is bared, followed by the operations enumerated below: a) deposition of doped polycrystalline silicon in order to form a pole (42) of the diode, wherein the substrate forms the other pole; b) definition of a desired silicon pattern (14) covering the space left between the electrodes and also covering a region located outside said space; c) deposition of an insulating layer (18), local etching of an opining in said insulating layer above the polycrystalline silicon outside the space located between the electrodes, in order to form a displaced contact area, deposition of a metal coating and etching of the metal coating. The main application of the invention is the reading diode for a CCD-type reading register.

L'invention concerne les circuits intégrés comportant à la fois des électrodes conductrices déposées au-dessus d'un substrat semiconducteur et une diode formée entre deux électrodes. Pour aboutir à une diode de très petite dimension, on procède de la manière suivante : réalisation des électrodes (ELn, GRST), puis oxydation thermique des électrodes puis mise à nu de la surface du substrat entre les électrodes, puis les opérations suivantes : a) dépôt de silicium polycristallin dopé pour former un pôle (42) de la diode, le substrat formant l'autre pôle, b) délimitation d'un motif de silicium (14) désiré, recouvrant l'espace laissé entre les électrodes et recouvrant également une région située hors de cet espace ; c) dépôt d'une couche isolante (18), gravure locale d'une ouverture dans cette couche isolante au-dessus du silicium polycristallin hors de l'espace situé entre les électrodes, pour former une zone de contact déportée, dépôt d'une couche métallique et gravure de la couche métallique. L'application principale envisagée est la diode de lecture d'un registre de lecture de type CCD.

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