Thin film semiconductor device

Details Thin film semiconductor device Thin film semiconductor device

H - Electricity

01

L

H01L 31/02 (2006.01) H01L 31/0368 (2006.01) H01L 31/113 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)

Patent

CA 2063964

A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.

Dispositif à semiconducteurs comprenant au moins une couche isolante; une couche semiconductrice étant en contact avec la couche isolante; une première et une deuxième électrodes étant en contact avec la couche semiconductrice; et une troisième électrode traversant la couche isolante. La couche semiconductrice comprend une couche de cristallite dont le grain a un diamètre moyen compris entre 50 et 350 .ANG. et une couche amorphe.

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