Mems sensor systems and methods

Details Mems sensor systems and methods Mems sensor systems and methods

G - Physics

01

C

G01C 21/18 (2006.01) B81C 1/00 (2006.01)

Patent

CA 2565752

MEMS Sensor Systems and Methods are provided. In one embodiment, a method for producing a six degree of freedom inertial sensor is provided. The method comprises fabricating a first silicon wafer segment having at least one inertial sensor pair, the at least one inertial sensor pair comprising one or both of a pair of orthogonally oriented accelerometers and a pair of orthogonally oriented gyroscopes; fabricating a second silicon wafer segment having at least one inertial sensor, the at least one inertial sensor comprising one or both of an accelerometer and a gyroscope; assembling together the first silicon wafer segment and the second silicon wafer segment such that the at least one inertial sensor pair and the at least one inertial sensor are oriented orthogonal to each other, and bonding the first silicon wafer segment to the second silicon wafer segment.

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