Method of etching a silicon-based material

Details Method of etching a silicon-based material Method of etching a silicon-based material

H - Electricity

01

L

H01L 21/306 (2006.01)

Patent

CA 2637737

A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns.

L~invention concerne un procédé de décapage sélectif d~un substrat en silicium en de petites zones localisées de manière à former des colonnes ou piliers dans la surface décapée. Le substrat de silicium est maintenu dans une solution décapante de fluorure d~hydrogène, d~un sel d~argent et d~un alcool. L~inclusion d~un alcool permet d~obtenir une densité de tassement des colonnes de silicium plus élevée.

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