G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 1/14 (2006.01) G03F 1/00 (2006.01) G11B 7/26 (2006.01) H01L 21/027 (2006.01)
Patent
CA 2056308
A method of manufacturing a photomask for an optical memory, the photomask having two types of patterns where guide tracks and formatting pits are different in amount of optical transmissions, including the steps of (a) forming on a transparent substrate a thin film of which light transmission amount depends upon its thickness; (b) forming a photoresist film on the thin film; (c) exposing the photoresist film to light with different light intensities depending selectively on the guide tracks or formatting pits; (d) eliminating the photoresist film exposed to the more intense light by the development until the thin film becomes surface; (e) etching the thin film, exposed to the more intense light, which has surfaced; (f) eliminating the photoresist film until the thin film exposed to the less intense light becomes surface; (g) etching away the thin film, exposed to the more intense light, which has surfaced until the transparent substrate becomes surface; and (h) eliminating the remnant photoresist film.
Hirokane Junji
Inui Tetsuya
Mieda Michinobu
Ohta Kenji
G. Ronald Bell & Associates
Sharp Kabushiki Kaisha
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