Semiconductor light detecting device

Details Semiconductor light detecting device Semiconductor light detecting device

H - Electricity

01

L

H01L 31/075 (2006.01) H01L 31/105 (2006.01)

Patent

CA 2119176

A light detecting device of the present invention comprises a third semiconductor layer containing a second conductive impurity which is formed in the upper part of a semiconductor layer containing a first conductive impurity and a fourth semiconductor layer containing the second conductive impurity which is formed in the semiconductor layer around the third semiconductor layer with an interval between the layers.

Dispositif de détection de lumière comportant une troisième couche de semi-conducteur. Cette couche contient une deuxième impureté conductive formée dans la partie supérieure d'une couche de semi-conducteur contenant une première impureté conductive. Ce dispositif contient également une quatrième couche de semi-conducteur contenant la deuxième impureté conductive formée dans la couche de semi-conducteur entourant la troisième couche de semi-conducteur, un espace étant intercalé entre les couches.

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