H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/02 (2006.01) H01L 21/336 (2006.01) H01L 21/337 (2006.01) H01L 29/10 (2006.01) H01L 29/808 (2006.01)
Patent
CA 2663668
A semiconductor device includes a first circuit section (200A) having at least one transistor (Tl) coupled to at least three conductive lines (202, 204, 206) formed from a conductive layer. No more than one of the at least one of the three conductive lines (204) forms a control terminal of the at least one transistor. In addition, a second circuit section (200B) includes at least two transistors (T3 - T6). Each such transistor has a control terminal (234, 236, 238, 240) formed by a conductive line formed from the same conductive layer. The three conductive lines of the first circuit section have the same pitch pattern as the conductive lines of the second circuit section.
L'invention concerne un dispositif à semi-conducteur pouvant comprendre une première unité circuit possédant au moins un transistor couplé à au moins trois lignes conductrices formées à partir d'une couche conductrice. L'une au maximum de ces lignes conductrices forme une borne de commande du ou des transistors. En outre, une seconde unité circuit comprend au moins deux transistors. Chaque transistor peut comprendre une borne de commande formée par une ligne conductrice formée à partir de la même couche conductrice. Les trois lignes conductrices de la première unité circuit peuvent présenter le même motif de pas que celui des lignes conductrice de la seconde unité circuit.
Chou Richard K.
Kapoor Ashok Kumar
Thummalapally Damodar R.
Dsm Solutions Inc.
Kirby Eades Gale Baker
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