Growth of bulk single crystals of aluminum

Details Growth of bulk single crystals of aluminum Growth of bulk single crystals of aluminum

C - Chemistry, Metallurgy

30

B

C30B 15/02 (2006.01) C30B 17/00 (2006.01) C30B 29/38 (2006.01)

Patent

CA 2380145

Large diameter single crystals of aluminum nitride (AIN) are grown at elevated temperatures. A seed crystal (130) that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AIN that is formed in the melt is deposited on the seed crystal (130). An apparatus for carrying out the method is also disclosed.

On fait croître à des températures élevées des monocristaux de grand diamètre en nitrure d'aluminium (AIN). Un cristal germe (130), maintenu à une température inférieure à celle de l'aluminium liquide environnant, est tiré du bain de fusion, tandis que le nitrure d'aluminium (AIN) qui est formé dans le bain de fusion est déposé sur le cristal germe (130). Un appareil de réalisation de ce procédé est également décrit.

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