Sub-micron planar lightwave devices formed on an soi optical...

G - Physics – 02 – B

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G02B 6/12 (2006.01) G02B 1/02 (2006.01) G02F 1/00 (2006.01) G02F 1/015 (2006.01)

Patent

CA 2521660

A set of planar, two-dimensional optical devices is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change for a propagating optical signal.

Un ensemble de dispositifs optiques bidimensionnels plans peut être créé dans une couche superficielle submicronique d'une structure SOI (silicium sur isolant) ou dans une combinaison d'épaisseur submicronique d'une couche superficielle SOI et d'une couche de polysilicium sus-jacente. Des techniques de masquage/gravure classiques peuvent être utilisées pour former une variété de dispositifs optiques et passifs dans ladite plate-forme SOI. Diverses zones des dispositifs peuvent être dopées en vue de la formation des structures de dispositifs actifs. De plus, la couche de polysilicium peut être formée selon un certain motif, de manière séparée, afin qu'une zone de changement d'index de mode effectif pour un signal optique se propageant soit produite.

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