C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.08, 204/1
C23C 14/35 (2006.01) H01J 37/34 (2006.01)
Patent
CA 2023092
Method and device for layer sputtering Solution relates to sphere of thin layer sputtering, especial- ly titanium-nitride-type hard, abrasion-proof layers. Ionise- tion current on substrates, especially in greater distances from cathode, is in well-known sputtering methods weak or non-homogeneous. The new solution increases density and homo- geneity of both ionization and electron current on substrates and enables ionic cladding during layer sputtering and with floating potential of substrates. Substrates are placed in holding space defined by lines of force of magnetic multipo- lar field that includes closed tunnel of magnetron-type lines of force above sputtered cathode and whose direction on boun- dary of holding space changes by turns from positive polarity to negative one and vice versa. Interaction of glow discharge with magnetic multipolar field forms in holding space homoge- neous plasma whose particles bombard substrates. Degree of plas- ma's holding is controlled by form of magnetic field or by vol- tage on auxiliary cathode that passes through holding space. Device includes sources of magnetic field placed around hol- ding space with alternating orientation. In order to control degree of plasma's holding the device includes electromagnets or sliding anode extension piece or auxiliary electrode.
Kadlec Stanislav
Musil Jindrich
G. Ronald Bell & Associates
Kadlec Stanislav
Musil Jindrich
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