H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/20 (2006.01) H01L 21/304 (2006.01) H01L 21/762 (2006.01)
Patent
CA 2220600
A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.
L'invention est une méthode de fabrication d'articles à semi-conducteur qui comporte les opérations suivantes: préparation d'un premier substrat constitué d'une couche de silicium poreuse et d'une couche de semi-conducteur non poreuse déposée sur elle, collage de ce premier substrat et d'un second substrat pour produire une structure multicouche à l'intérieur de laquelle se trouve la couche de semi-conducteur non poreuse, séparation l'un de l'autre du premier et du second substrat de la structure multicouche au niveau de la couche de silicium poreuse par chauffage de la structure multicouche et enlèvement de la couche de silicium poreuse résiduelle sur le second substrat.
Atoji Tadashi
Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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