Method of producing a single crystal gan substrate and...

Details Method of producing a single crystal gan substrate and... Method of producing a single crystal gan substrate and...

H - Electricity

01

L

H01L 21/20 (2006.01) C30B 25/02 (2006.01) C30B 29/38 (2006.01) C30B 29/64 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2352132

GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained.

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