Chemical mechanical polishing slurry useful for...

C - Chemistry – Metallurgy – 09 – K

Patent

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Details

C09K 3/14 (2006.01) C09G 1/02 (2006.01) H01L 21/321 (2006.01)

Patent

CA 2335033

The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

La présente invention concerne une première boue CMP renfermant un abrasif, un agent oxydant, un agent complexant, un agent filmogène et un composé amino organique, et une seconde boue de polissage renfermant un abrasif, un agent oxydant et un acide acétique; le rapport pondéral entre l'agent oxydant et l'acide acétique étant au moins 10. Par ailleurs, cette invention concerne un procédé d'utilisation des première et seconde boues de polissage successivement, en vue de polir un substrat contenant du cuivre, du tantale ou du nitrure de tantale ou contenant à la fois du tantale et du nitrure de tantale.

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