H - Electricity – 04 – B
Patent
H - Electricity
04
B
H04B 1/26 (2006.01) H01P 5/10 (2006.01) H03D 9/06 (2006.01) H04B 1/28 (2006.01)
Patent
CA 2331355
A double-balanced monolithic microwave integrated circuit mixer is fabricated on a GaHs substrate with a local oscillator microstrip balun formed thereon. A crossover diode ring (44) is also formed upon the substrate. The radio frequency microstrip balun and the local oscillator microstrip balun provide enhanced electrical isolation between a radio frequency port (24) and a local oscillator port (74), enhanced spurious response suppression, and enhanced local oscillator noise rejection in only 0.021" x 0.048" of circuit area.
On fabrique un mélangeur hyperfréquence monolithique doublement symétrique à circuit intégré sur un substrat de GaHs sur lequel est placé un symétriseur microruban d'oscillateur local. Un réseau croisé de diodes (44) est également placé sur le substrat. Le symétriseur microruban haute fréquence et le symétriseur microruban d'oscillateur local permettent d'améliorer l'isolation électrique entre un point d'accès haute fréquence (24) et un point d'accès (74) d'oscillateur local, la suppression de la réponse parasite et le rejet du bruit de l'oscillateur local dans une zone de circuit de 0,021'' x 0,048'' seulement.
Gowling Lafleur Henderson Llp
Northrop Grumman Corporation
Northrop Grumman Systems Corporation
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